Title :
An active control gate drive circuit for IGBTs to realize low-noise and snubberless system
Author :
Igarashi, S. ; Takizawa, S. ; Tabata, M. ; Takei, M. ; Kuroki, K.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Tokyo, Japan
Abstract :
This paper describes a novel gate drive circuit for IGBTs to realize low-noise and snubberless system. This gate drive circuit controls the gate voltage to suppress the collector current variation ratio di/dt, which causes the reduction of surge voltage and voltage variation ratio dv/dt at the switching operation. The turn on di/dt and turn off di/dt are detected by the secondary winding of a saturation type reactor inserted into the counter-arm and the wiring inductance voltage at the emitter terminal, respectively. The experimental results and simulation results indicate that the surge voltage and dv/dt can be reduced without increasing the switching loss, allowing snubberless, low noise operation of IGBTs
Keywords :
circuit analysis computing; driver circuits; insulated gate bipolar transistors; power semiconductor switches; semiconductor device noise; voltage control; IGBTs; active control gate drive circuit; collector current variation ratio suppression; gate voltage control; saturation type reactor secondary winding; simulation results; snubberless low noise operation; surge voltage; switching loss; switching operation; turn off; turn on; voltage variation ratio; wiring inductance voltage; Control systems; Inductors; Insulated gate bipolar transistors; MOSFET circuits; Noise generators; Noise reduction; Power generation; Surges; Switching circuits; Voltage control;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601434