• DocumentCode
    3233170
  • Title

    Multi-Layer Model for Stressor Film Deposition

  • Author

    Loiko, K.V. ; Adams, V. ; Tekleab, D. ; Winstead, B. ; Bo, X.-Z. ; Grudowski, P. ; Goktepeli, S. ; Filipiak, S. ; Goolsby, B. ; Kolagunta, V. ; Foisy, M.C.

  • Author_Institution
    Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX
  • fYear
    2006
  • fDate
    6-8 Sept. 2006
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive current vs. etch-stop layer stress, poly pitch, source/drain recess, and spacer stress
  • Keywords
    MOSFET; semiconductor device models; stress effects; MOSFET; drive current; etch-stop layer stress; mechanical quasiequilibrium; multilayer model; physical deposition process; poly pitch; source-drain recess; spacer stress; stressor film deposition; Compressive stress; Equations; Etching; Mathematical model; Semiconductor films; Silicon; Space technology; Stress measurement; Surface treatment; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2006 International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0404-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2006.282853
  • Filename
    4061596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3233170