Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric

Post deposited Annealing of high-permittivity HfTiO gate dielectrics on Ge substrate in different gases (N₂, NO and N₂O) is investigated, and sub-nanometer equivalent oxide thickness (EOT) HfTiO dielectric has been achieved. Results of Transmission Electron Microscope (TEM), Atomic Force Microscope (AFM) and electrical measurement indicate that wet N₂ annealing can greatly suppress the growth of interlayer at the dielectric/Ge substrate interface, while wet NO and N₂O annealing reduce equivalent permittivity of dielectric due to the growth of GeON interlayer.