Title :
Measurements and simulations of excess carrier distributions in 3.3 kV IGBTs during static conditions and turn-on
Author :
Tornblad, O. ; Breitholtz, B. ; Ostling, M.
Author_Institution :
Dept. of Electron., KTH-Electrum, Kista, Sweden
Abstract :
A careful sample preparation technique and optical alignment allowed depth- and time-resolved free carrier absorption measurements of excess carrier distributions in the n-base of 3.3 kV Si IGBTs. Measurements were performed under static equilibrium and turn-on for current densities in the range 10-50 A/cm2 for temperatures in the interval 35-150 °C. The correspondence with numerical simulation results was qualitatively good, but with relatively large quantitative discrepancies
Keywords :
carrier density; carrier lifetime; insulated gate bipolar transistors; semiconductor device models; 3.3 kV; 35 to 150 C; IGBTs; Si; current densities; depth-resolved free carrier absorption; excess carrier distributions; n-base; numerical simulation; optical alignment; sample preparation technique; static equilibrium; time-resolved free carrier absorption; turn-on; Anodes; Cathodes; Computational modeling; Current density; Insulated gate bipolar transistors; Numerical simulation; Predictive models; Space vector pulse width modulation; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601437
