Title :
Low-Field Mobility in Strained Silicon with `Full Band´ Monte Carlo Simulation using k.p and EPM Bandstructure
Author :
Feraille, M. ; Rideau, D. ; Ghetti, A. ; Poncet, A. ; Tavernier, C. ; Jaouen, H.
Author_Institution :
STMicroelectron., Crolles
Abstract :
Recent works have shown that accurate band-structure for strained silicon can be obtained using full-zone k.p method, In this paper we have performed full-band Monte Carlo transport simulations in strained silicon using k.p band structure, and we have compared to simulations performed using the well-benchmarked EPM band structure
Keywords :
Monte Carlo methods; conduction bands; electronic density of states; elemental semiconductors; hole mobility; k.p calculations; silicon; valence bands; EPM bandstructure; Si; electronic density of states; full band Monte Carlo simulation; full-zone k.p method; hole mobility; low-field mobility; strained silicon; Capacitive sensors; Dispersion; Germanium silicon alloys; MOSFET circuits; Monte Carlo methods; Orbital calculations; Photonic band gap; Power engineering and energy; Power generation economics; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282886
