DocumentCode :
3234188
Title :
The growth kinetics of colloidal InP nanocrystals
Author :
Zhang, Jianbing ; Zhang, Daoli ; Yuan, Lin ; Hu, Yunxiang
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
fYear :
2008
fDate :
6-9 Jan. 2008
Firstpage :
510
Lastpage :
514
Abstract :
InP nanocrystals were synthesized using dehalosilylation reaction in trioctylphosphine oxide (TOPO), and they were characterized by Powder X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-vis spectrometer and fluorescent spectrometer. The growth process was studied by monitoring the photoluminescence (PL) and UV-vis absorption spectra during the whole synthetic procedure. The growth process involves: formation of precursors, decomposition of the precursors, nucleation, growth of the nuclei, Ostwald ripening, and annealing of the nanoparticles, and some of them overlap in time. Many defects are introduced in the growth process of the nuclei, but the annealing procedure will diminish the defects, which is critical for producing well crystalline InP nanocrystals.
Keywords :
III-V semiconductors; X-ray diffraction; annealing; colloidal crystals; fluorescence; indium compounds; nanoparticles; nanotechnology; nucleation; photoluminescence; semiconductor growth; transmission electron microscopy; ultraviolet spectra; visible spectra; InP; Ostwald ripening; UV-vis absorption spectra; annealing; colloidal nanocrystals; decomposition; dehalosilylation reaction; fluorescence; nanoparticles; nucleation; photoluminescence; powder X-ray diffraction; transmission electron microscopy; trioctylphosphine oxide; Annealing; Fluorescence; Indium phosphide; Kinetic theory; Nanocrystals; Powders; Spectroscopy; Transmission electron microscopy; X-ray diffraction; X-ray scattering; InP; colloidal; defect; growth kinetics; nanocrystals; quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
Type :
conf
DOI :
10.1109/NEMS.2008.4484383
Filename :
4484383
Link To Document :
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