Title :
A New Statistical Model for SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution
Author :
Shim, Byung Sup ; Jin, Seonghoon ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.
Abstract :
A new statistical model accurately reproducing the result of the Monte-Carlo (MC) simulation is proposed for the analysis of the SILC distribution of flash memory. From the pre-calculated probability density distributions (PDD) of the current through one multi-trap (1-trap and 2-trap) path, the current PDD of the cell is obtained using the convolution theorem and compared with the result of MC simulation. Current PDD of the cell is found to be very sensitive to the spatial distribution of traps
Keywords :
Monte Carlo methods; flash memories; leakage currents; probability; statistical analysis; Monte-Carlo simulation; PDD; SILC distribution; convolution theorem; flash memory; probability density distribution; spatial trap distribution; statistical model; stress-induced leakage current; Analytical models; Computational modeling; Computer science; Computer simulation; Convolution; Electronic mail; Flash memory; Predictive models; Probability; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282901
