Design a high-g bridge-type accelerometer using GaAs/InxGa1-xAs/AlAs thin films

In this paper, we present a novel GaAs microaccelerometer based on sensing elements of GaAs/In_xGa_1-xAs/AlAs thin film. The structure of which contain two suspended flexural beams and a central proof mass configuration. The sensing element consists of double barrier heterostructure comprising a GaAs quantum well and two AlAs potential barrier structures. The finite element method (FEM) is used to stimulate the function of microaccelerometer and sensing element locate in the place where the stress is maximal on the beam. In addition, the sensing element and proof mass are successfully fabricated by double airbridge technique and control holes technique separately. Finally, the static and dynamic experiments have conducted on the sensing element and accelerometer, respectively. The measured dynamic sensitivity of GaAs Piezoresistor Accelerometer can reach to 60 muVg^-1.