Title :
Low-noise high-power heterojunction bipolar transistors for mixed-mode applications
Author :
Jenkins, T. ; Barlage, Douglas W ; Barrette, J. ; Lee, Razak ; Liou, L. ; Bozada, C. ; Dettmer, Roger ; Fitch, R. ; Mack, M. ; Sewell, J.
Author_Institution :
Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
Abstract :
A novel AlGaAs-GaAs heterojunction bipolar transistor (HBT), which provides state-of-the-art noise and record power density through X-band, was developed. This performance is due to advanced design and fabrication techniques. This HBT is readily transferable to mixed-mode applications, such as portable telephones and radar transmit/receive modules.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device noise; AlGaAs-GaAs; SHF; X-band; heterojunction bipolar transistors; low-noise high-power HBT; mixed-mode applications; Circuit noise; Fabrication; Frequency; Geometry; Heterojunction bipolar transistors; Noise figure; Noise reduction; Temperature; Thermal lensing; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406170
