Title :
Characterization of planar resonators by means of integrated Schottky diodes
Author :
Stiller, A. ; Singer, M. ; Strohm, K.M. ; Biebl, E.M.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector´s sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the Schottky diode. Thus, for maximum sensitivity the equation Z/sub Schottky//spl ap/-Z*/sub IMPATT/ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode.<>
Keywords :
IMPATT diodes; Schottky diodes; equivalent circuits; impedance matching; millimetre wave diodes; millimetre wave measurement; resonators; 60 to 100 GHz; IMPATT diode resonator; integrated Schottky diodes; planar resonator characterisation; radiation characteristics; sensitivity; Detectors; Electrical resistance measurement; Equivalent circuits; Frequency estimation; Impedance measurement; Oscillators; Schottky diodes; Silicon; Testing; Zirconium;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406176
