Title :
A high-power low-loss GTO with adjustable IGT
Author :
Eicher, S. ; Weber, A. ; Bauer, F. ; Zeller, H.R. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
With the concept of the transparent anode GTO (TGTO) it is possible to decouple the IGT from other performance parameters. The key features of the TGTO are a buffer layer and a low-efficiency anode. By diffusing small shorts into the anode layer it becomes possible to adjust the IGT without affecting the conduction or switching behavior. The very low losses of the non-shorted TGTO devices are fully preserved. We have fabricated and characterized such devices with different shorting schemes and present the experimental results in this paper
Keywords :
losses; power semiconductor switches; semiconductor doping; short-circuit currents; thyristors; 3 kA; 4.5 kV; adjustable gate trigger current; buffer layer; conduction losses; high-power low-loss GTO; low-efficiency anode; shorting schemes; transparent anode GTO; very low losses; Anodes; Buffer layers; Cathodes; Costs; Doping profiles; Electronic switching systems; Laboratories; Switching loss; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601444
