Title :
Lateral MOSFET transistor with movable gate for NEMS devices compatible with “In-IC” integration
Author :
Ollier, E. ; Duraffourg, L. ; Colinet, E. ; Durand, C. ; Renaud, D. ; Royet, AS ; Renaux, P. ; Casset, F. ; Robert, P.
Author_Institution :
CEA-LETI MINATEC, Grenoble
Abstract :
The paper presents a lateral MOSFET structure with movable gate used to enable the displacement measurement in NEMS devices compatible with "In-IC" integration. The modeling of this novel structure has been performed. Demonstrators have been fabricated based on SON technology and first electrical characteristics have been obtained.
Keywords :
MOSFET; displacement measurement; In-IC integration; NEMS devices; displacement measurement; lateral MOSFET structure; lateral MOSFET transistor; movable gate; CMOS technology; Costs; MOSFET circuits; Micromechanical devices; Nanoelectromechanical systems; Parasitic capacitance; Q factor; Resonance; Silicon; Substrates; Integration; MOSFET; NEMS; Resonantor; SOI; Silicon on Nothing;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484439
