Title :
Resolving capacitor discrepancies between large and small signal FET models
Author :
Calvo, M.V. ; Snider, Arthur David ; Dunleavy, Lawrence P.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
A novel solution is presented for the well known capacitor discrepancy problem between large and small signal FET models. The discrepancy arises due to the two-parameter bias voltage dependence of the intrinsic FET model capacitances. The resolution is enabled by the proper choice of partial-integration constants associated with the transformation of a charge source in the large signal model to a capacitor in the small signal model.<>
Keywords :
S-parameters; capacitance; equivalent circuits; field effect transistors; semiconductor device models; capacitor discrepancies; charge source transformation; intrinsic FET model capacitances; large signal FET models; partial-integration constants; small signal FET models; two-parameter bias voltage dependence; Capacitance; Capacitors; Educational institutions; Equations; FETs; Scattering parameters; Signal generators; Signal resolution; Virtual reality; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406198
