Title :
A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors
Author :
Wu, Hsien-Chang ; Mijalkovic, Slobodan ; Burghartz, Joachim N.
Author_Institution :
Lab. of High Frequency Technol. & Components, Delft Univ. of Technol.
Abstract :
A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology
Keywords :
Ge-Si alloys; geometry; heterojunction bipolar transistors; integrated circuit design; power bipolar transistors; scaling circuits; system-on-chip; Mextram model; bipolar transistor model parameters; configuration scaling; geometry scaling methodology; high-speed SiGe HBT technology; Bipolar transistors; Equations; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Solid modeling; System-on-a-chip; Temperature; Thermal resistance; Geometry scaling; Mextram model; Multi-emitter SiGe HBT; collector resistance; thermal resistance;
Conference_Titel :
Behavioral Modeling and Simulation Workshop, Proceedings of the 2006 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9742-8
DOI :
10.1109/BMAS.2006.283469
