Title :
Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs
Author :
Srinivasan, R. ; Bhat, Navakanta
Author_Institution :
Dept. of Electr. Commun., Indian Inst. of Sci., Bangalore, India
Abstract :
The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has been studied using process and device simulation. It is shown that under fixed gate (Vgs) and drain (Vds) bias voltages, the NQS transition frequency (fNQS) scales as 1/Leff rather than 1/L2eff due to the velocity saturation effect. However, under the practical scaling guidelines, considering the scaling of supply voltage as well, fNQS shows a turn around effect at the sub 100 nm regime. The relation between unity gain frequency (ft) and fNQS is also evaluated and it is shown that ft and fNQS have similar trends with scaling.
Keywords :
MOSFET; radiofrequency integrated circuits; scaling phenomena; semiconductor device models; 1 to 0.09 micron; 100 nm; MOSFET nonquasi-static behaviour; NQS transition frequency; RF IC; device simulation; fixed drain bias voltage; fixed gate bias voltage; process simulation; scaling effects; scaling guidelines; supply voltage scaling; turn around effect; unity gain frequency; velocity saturation effect; CMOS technology; Clocks; Electrons; Guidelines; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Steady-state; Voltage;
Conference_Titel :
VLSI Design, 2003. Proceedings. 16th International Conference on
Print_ISBN :
0-7695-1868-0
DOI :
10.1109/ICVD.2003.1183122
