Title :
A simple and effective carrier lifetime evaluation method with diode test structures in IGBT
Author :
Aono, Shinji ; Takahashi, Tetsuo ; Nakamura, Katsumi ; Nakamura, Hideki ; Uenishi, Akio ; Harada, Masana
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A simple and effective method of evaluating the carrier lifetime of a power device chip is proposed. In this method, Test Element Groups (TEGs) of diodes fabricated in the periphery of an Insulated Gate Bipolar Transistor (IGBT) chip were used as carrier lifetime monitors of the IGBT´s n- layer. The measured forward voltage drops (V f) of the diode-TEGs were compared with simulated Vf and the lifetime was determined from the lifetime parameter of simulations. The estimated lifetime value was verified by the reverse recovery current characteristic
Keywords :
carrier lifetime; electric variables measurement; insulated gate bipolar transistors; semiconductor device testing; IGBT; carrier lifetime evaluation; diode test structures; forward voltage drops; n- layer; power device chip; reverse recovery current characteristic; simulations; test element groups; Area measurement; Cathodes; Charge carrier lifetime; Current measurement; Diodes; Insulated gate bipolar transistors; Life estimation; Life testing; Lifetime estimation; Semiconductor device measurement;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601449
