A SOI-CMOS micro-power first-order sigma-delta modulator

Author

Viviani, A. ; Flandre, D. ; Jespers, P.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

110

Lastpage

111

Abstract

The low-power and high-temperature potentials of SOI have been used to design a ΣΔ modulator that achieves performances hard to obtain in bulk technology. From this first study, we estimate that further improvements based on the use of a technology with lower transistor size and lower threshold voltage, together with higher-order loop filters and higher OSR could boost the precision and further reduce the power dissipation, for the same signal bandwidth. The potential of FD SOI in high-temperature data conversion has also been demonstrated

Keywords

CMOS integrated circuits; integrated circuit measurement; integrated circuit noise; sigma-delta modulation; silicon-on-insulator; ΣΔ modulator; 2 V; 22 muA; 350 C; SNR; SOI-CMOS micro-power first-order sigma-delta modulator; high-temperature data conversion; loop filters; low-power; oversampling ratio; power dissipation; threshold voltage; transistor size; Current measurement; Delta-sigma modulation; Energy consumption; Frequency; Hysteresis; Noise measurement; Noise reduction; Performance evaluation; Signal to noise ratio; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552518

Filename

552518