• DocumentCode
    3236489
  • Title

    A new symmetrical beam-mass structure for accelerometers by anisotropic etching without convex corner compensation

  • Author

    Xiao, Fei ; Che, Lufeng ; Fan, Kebin ; Xiong, Bin ; Wang, Yuelin

  • Author_Institution
    Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
  • fYear
    2008
  • fDate
    6-9 Jan. 2008
  • Firstpage
    1059
  • Lastpage
    1062
  • Abstract
    This paper reports a new symmetrical beam-mass structure for sandwich capacitive accelerometers. The single-wafer fabrication of the symmetrical double-sided beam-mass structure in which eight straight beams are connected to the corners of the proof mass is accomplished only by anisotropic wet etching of a (100) wafer without convex corner compensation. Different measuring-range accelerometers can be got by controlling the thickness of the spring beam. A packaged sensor with 140 mum beam thickness is measured by a dropping hammer system. The sensitivity is 58 muV/g for a 5000 g shock acceleration under 5 V power supply.
  • Keywords
    accelerometers; beams (structures); etching; anisotropic etching; anisotropic wet etching; convex corner compensation; dropping hammer system; measuring-range accelerometer; proof mass; sandwich capacitive accelerometer; shock acceleration; single-wafer fabrication; spring beam; symmetrical double-sided beam-mass structure; Accelerometers; Anisotropic magnetoresistance; Electric shock; Fabrication; Packaging; Sensor systems; Springs; Thickness control; Thickness measurement; Wet etching; Anisotropic etching; capacitive sensors; micromachined accelerometer; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-1907-4
  • Electronic_ISBN
    978-1-4244-1908-1
  • Type

    conf

  • DOI
    10.1109/NEMS.2008.4484501
  • Filename
    4484501