An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Author

Sun, Hongzhi ; Maarouf, Fares ; Fang, Deyou ; Jia, Kemiao ; Huikai Xie

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL

fYear

2008

fDate

6-9 Jan. 2008

Firstpage

1075

Lastpage

1080

Abstract

This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 mum technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 times 10^-3/degC to 5.4 times 10^-4degC.

Keywords

CMOS analogue integrated circuits; accelerometers; capacitive sensors; low noise amplifiers; microsensors; reference circuits; PMOS; bonding pads; capacitive CMOS-MEMS accelerometers; dual-chopper amplifier; on-chip band-gap voltage reference; size 0.35 mum; three-axis accelerometer; Accelerometers; Bonding; Circuit noise; Low pass filters; Low-noise amplifiers; MOS devices; Noise reduction; Photonic band gap; Temperature sensors; Voltage; CMOS-MEMS Accelerometer; Dual-Chopper Amplifier; Low Noise; Low Power; Three-Axis Accelerometer;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on

Conference_Location

Sanya

Print_ISBN

978-1-4244-1907-4

Electronic_ISBN

978-1-4244-1908-1

Type

conf

DOI

10.1109/NEMS.2008.4484505

Filename

4484505