Title :
Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K
Author :
Xu, Ziyan ; Wei, Xiaoyun ; Niu, Guofu ; Luo, Lan ; Thomas, Dylan ; Cressler, John D.
Author_Institution :
ECE Dept., Auburn Univ., Auburn, AL
Abstract :
This paper examines modeling of IC-VBE from 43 to 400 K in a 50 GHz peak fT SiGe HBT technology. Existing temperature scaling equations are shown to fail below 200 K. New temperature scaling equations are proposed, and demonstrated to work well over a wide temperature range of 43-400 K. Implications to VBE - T and DeltaVBE - T for two transistors biased at different current densities are discussed.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; current density; energy gap; heterojunction bipolar transistors; semiconductor materials; SiGe; SiGe HBT technology; bandgap reference; current density; frequency 50 GHz; heterojunction bipolar transistors; nonideality factor; temperature 43 K to 400 K; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Noise measurement; Photonic band gap; Silicon germanium; Temperature dependence; Temperature distribution; USA Councils; Bandgap Reference; Nonideality Factor; SiGe HBT; Temperature Dependence;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662717
