0.13μm SiGe BiCMOS technology for mm-wave applications

Author

Avenier, G. ; Chevalier, P. ; Troillard, G. ; Vandelle, B. ; Brossard, F. ; Depoyan, L. ; Buczko, M. ; Boret, S. ; Montusclat, S. ; Margain, A. ; Pruvost, S. ; Nicolson, S.T. ; Yau, K.H.K. ; Gloria, D. ; Dutartre, D. ; Voinigescu, S.P. ; Chantre, A.

Author_Institution

STMicroelectronics, Crolles

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

89

Lastpage

92

Abstract

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f_T/f_MAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum² high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIM devices; MOSFET; bipolar MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; BiCMOS technology; SiGe; complementary double gate oxide MOS transistor; high-linearity MIM capacitor; high-speed medium voltage HBT; inductors; millimeter-wave applications; size 0.13 mum; thick-copper back-end design; transmission lines; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; Medium voltage; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Transmission lines; BiCMOS integrated circuits technology; Heterojunction bipolar transistor (HBT); Integrated circuit fabrication; Millimeter wave technology; Silicon Germanium (SiGe);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662719

Filename

4662719