Title :
An 850 mW X-Band SiGe power amplifier
Author :
Andrews, Joel ; Cressler, John D. ; Kuo, Wei-Min Lance ; Grens, Curtis ; Thrivikraman, Tushar ; Phillips, Stan
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
An 850 mW SiGe power amplifier operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB of gain and 18% PAE is presented. This SiGe PA was implemented in a commercially-available, third-generation 130 nm 200 GHz SiGe BiCMOS platform using a hybrid high-breakdown / high-speed cascode pair to enhance voltage swing.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electric breakdown; microwave power amplifiers; semiconductor materials; BiCMOS process technology; SiGe; X-band frequencies; efficiency 18 percent; frequency 200 GHz; frequency 8.5 GHz to 10.5 GHz; gain 11 dB; hybrid high-breakdown/high-speed cascode pair; power 850 mW; power amplifier; size 130 nm; voltage swing enhancement; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; High power amplifiers; Impedance; Power amplifiers; Power generation; Silicon germanium; Voltage; SiGe BiCMOS process technology; power amplifiers;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662724
