Unipolar and bipolar organic field-effect transistors

This paper describes the characteristics and performance levels of unipolar as well as bipolar organic field-effect transistors (FETs) and also the possible applications enabled by these performance levels. Unipolar FETs can be either p-channel or n-channel depending on the active semiconductor chosen as well as the nature of the semiconductor-insulator interface, and bipolar FETs can be used as light-emitting devices. Bipolar FETs can be designed with a single semiconductor or in configurations involving material mixtures, vertical and lateral heterostructures.