A novel 3 V, 7 mA PHEMT GaAs active MMIC mixer/LNA for wireless applications

Author

Morkner, Henrik ; Frank, Mike ; Ingram, B.

Author_Institution

Hewlett-Packard Co., Newark, CA, USA

fYear

1995

fDate

17-19 May 1995

Firstpage

29

Lastpage

32

Abstract

A novel monolithic integrated active mixer/LNA utilizing advanced pseudomorphic GaAs FETs has been developed for a mobile wireless receiver. RF coverage is 900 MHz to 2400 MHz. The mixer/LNA operates on a single 3 volt supply at 7 mA. The mixer provides 4 dB conversion gain with a -10 dBm LO drive. The LNA provides a 1.6 dB noise figure and 14 dB gain. The die is small and packaged in the SSOP-16 plastic package to keep costs low. This is the only GaAs PHEMT active mixer/LNA known to provide such performance from such a small DC requirement

Keywords

MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF mixers; field effect MMIC; gallium arsenide; integrated circuit packaging; land mobile radio; plastic packaging; radio receivers; 1.6 dB; 14 dB; 3 V; 7 mA; 900 to 2400 MHz; GaAs; III-V semiconductor; LO drive; PHEMT active MMIC mixer/LNA; RF coverage; SSOP-16 plastic package; UHF; conversion gain; mobile wireless receiver; monolithic integrated active mixer/LNA; noise figure; performance; pseudomorphic GaAs FET; wireless applications; Costs; Gain; Gallium arsenide; MMICs; Microwave FETs; Mixers; Noise figure; PHEMTs; Plastic packaging; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95

Conference_Location

Orlando, FL

Print_ISBN

0-7803-2591-1

Type

conf

DOI

10.1109/NTCMWS.1995.522857

Filename

522857