Silicon RFCMOS SOI technology with above-IC MEMS integration for front end wireless applications

Author

Costa, J. ; Ivanov, T. ; Carroll, M. ; Hammond, J. ; Glass, E. ; Jorgenson, J. ; Denning, D. ; Kerr, D. ; Reed, J. ; Ren, Q. ; Crist, S. ; Mercier, T. ; Kim, S. ; Mckay, T. ; Gorisse, P. ; Gering, J.

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

204

Lastpage

207

Abstract

We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation wireless system applications. The silicon SOI technology also includes the integration of a solid-state RF switch, and a RF power LDMOS transistor with good linear and saturated RF power characteristics in the frequency range between 0.8 GH - 2.4 GHz. We present measured results of MEMS and FET solid-state RF switches, RF power devices, as well as characterization data integrated power management circuits.

Keywords

CMOS integrated circuits; MOSFET; microswitches; power semiconductor switches; radiofrequency integrated circuits; silicon; silicon-on-insulator; FET solid-state RF switches; RF CMOS thick silicon-on-insulator technology; RF power devices; Si; above-IC MEMS integration; contact switch; frequency 0.8 GHz to 2.4 GHz; front end wireless applications; high resistivity substrates; saturated RF power characteristics; silicon RFCMOS SOI technology; CMOS technology; Conductivity; Contacts; Micromechanical devices; Monolithic integrated circuits; Radio frequency; Radiofrequency microelectromechanical systems; Silicon on insulator technology; Solid state circuits; Switches; MEMS switch; RF CMOS; SOI; signal isolation; silicon power amplifiers; silicon switch; transmit modules;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662744

Filename

4662744