DocumentCode :
3237574
Title :
A 5GHz low power receiver front-end RFIC with one tail current implemented in SiGe BiCMOS technology
Author :
Jin, Yuehai ; Dai, Fa Foster
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL
fYear :
2008
fDate :
13-15 Oct. 2008
Firstpage :
224
Lastpage :
227
Abstract :
This paper presents a novel RF receiver front-end using only one shared tail current for low power application. The 5 GHz receiver front-end RFIC includes a voltage controlled oscillator (VCO), a double balanced mixer and a low noise amplifier (LNA) in a cascoded topology. The receiver RFIC was implemented in a 0.5 m SiGe BiCMOS technology. The VCO oscillation frequency is around 5 GHz, targeting at the WLAN 802.11a application. The VCO phase noise was measured around -105 dBc/Hz at 1 MHz frequency offset. Intermediate frequency (IF) output is centered at frequency of 600 MHz using a low-IF architecture and the conversion gain is measured more than 15 dB. The 1 dB gain compression point and sensitivity of the frontend is measured greater than -14 dBm and smaller than - 60 dBm respectively. The front-end core consumes 3.3 mA current from a 3.3 V power supply and occupies 1.4 mm2 area.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; low noise amplifiers; low-power electronics; millimetre wave mixers; millimetre wave receivers; radiofrequency integrated circuits; semiconductor materials; voltage-controlled oscillators; SiGe; SiGe BiCMOS technology; cascoded topology; current 3.3 mA; double balanced mixer; frequency 5 GHz; front-end RFIC; low noise amplifier; low power receiver; one tail current; phase noise; size 0.5 mum; voltage 3.3 V; voltage controlled oscillator; BiCMOS integrated circuits; Frequency conversion; Frequency measurement; Gain measurement; Germanium silicon alloys; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Tail; Voltage-controlled oscillators; BiCMOS; HBT; RF circuits; SiGe; low noise amplifier (LNA); phase noise; voltage controlled oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
ISSN :
1088-9299
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2008.4662749
Filename :
4662749
Link To Document :
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