A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENGs)

Author

Te-Kuang Chiang

Author_Institution

Electr. Eng. Dept., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

631

Lastpage

633

Abstract

This brief presents a novel scaling theory for fully depleted, multiple-gate (MG) MOSFET. The scaling theory is derived from the equation for effective number of gates (ENGs), ENG_QG=ENG_DG,1+ENG_DG,2 where the MG device can be genuinely broken into two equivalent double-gate (DG) transistors working in parallel based on the perimeter-weighted-sum method. Numerical device simulation data for drain-induced-barrier-lowering were compared with the model to validate the formula. Using the scaling theory, the minimum effective channel length improvement factor of ρ_MG=1-(ENG_DG/ENG_MG)^1/2 shows an improvement of up to 30% in the minimum effective channel length for the MG MOSFET in comparison with DG MOSFET.

Keywords

MOSFET; scaling circuits; semiconductor device models; ENG; MG device; drain-induced-barrier-lowering; effective number of gates; equivalent double-gate transistors; fully depleted MOSFET; multiple-gate MOSFET; perimeter-weighted-sum method; scaling theory; Equations; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Threshold voltage; DIBL; double-gate (DG) MOSFET; effective number of gates (ENGs); minimum effective channel length improvement factor (MECLIF); multiple-gate (MG) MOSFET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2294192

Filename

6689293