Title :
BiMOS modeling for reliable SOI circuit design
Author :
Krishnan, S. ; Fossum, J.G. ; Pelella, M.M.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
Summary form only given. Recent work has clearly revealed that transient current in the parasitic bipolar junction transistor (BJT) of the floating-body SOI MOSFET can be significant and degrading even in SOI circuits operating at voltages well below the BJT-defined drain-source breakdown. The BJT is also critically important with regard to soft errors in low-voltage SOI memory circuits. In these cases, the BJT current is driven by dynamic charging of the body and concomitant forward biasing of the source (or drain) junction, supported by capacitive, or charge coupling between the BJT and the MOSFET. A reliable circuit model for the floating-body SOI MOSFET must therefore account for the coupled BJT. In this paper we present a new, quasi-2D parasitic BJT model physically coupled to the SOISPICE MOSFET models and defined in terms of their parameters. We further use physical insight derived from this BiMOS modeling to identify a new means of controlling the transient BJT, or leakage current in SOI MOSFETs which could be exploited in design
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; capacitance; equivalent circuits; integrated circuit design; integrated circuit modelling; integrated circuit reliability; leakage currents; semiconductor device models; silicon-on-insulator; BiMOS modeling; SOISPICE MOSFET models; Si; capacitive coupling; charge coupling; circuit model; coupled BJT; dynamic charging; floating-body SOI MOSFET; leakage current; low-voltage SOI memory circuits; parasitic BJT; parasitic bipolar junction transistor; quasi-2D parasitic BJT model; reliable SOI circuit design; soft errors; transient current; Circuit simulation; Circuit synthesis; Germanium silicon alloys; Leakage current; MOSFETs; Medical simulation; Parasitic capacitance; Radiative recombination; Random access memory; Silicon germanium;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552533
