DocumentCode :
3239146
Title :
Electron spin resonance characterization of Unibond(R) material
Author :
Conley, J.F., Jr. ; Lenhan, P.M. ; Wallace, B.D.
Author_Institution :
Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA
fYear :
1996
fDate :
30 Sep-3 Oct 1996
Firstpage :
164
Lastpage :
165
Abstract :
Although recent studies of the electrical properties of Unibond(R) films have reported promising electrical characteristics, the physical nature of the defect structures responsible for the charge trapping properties of these films have not yet been studied via electron spin resonance (ESR). ESR provides structural information and allows testing of minimally processed structures making it an ideal tool for studying charge trapping in SiO2 films. When combined with electrical measurements such as capacitance vs. voltage (CV), ESR studies can provide detailed information about the atomic scale defect structures that dominate the electronic properties of thin insulating films. An atomic scale understanding of the electronic properties can be an important guide for future development. In this abstract, we compare the ESR and CV response of Unibond(R) wafers to hole injection and VUV irradiation
Keywords :
paramagnetic resonance; silicon-on-insulator; wafer bonding; SOI; Si-SiO2; Unibond wafer; VUV irradiation; capacitance voltage characteristics; charge trapping; defect structure; electron spin resonance; electronic properties; hole injection; insulating film; Annealing; Atomic measurements; Charge measurement; Current measurement; Density measurement; Electron traps; Implants; Paramagnetic resonance; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-3315-2
Type :
conf
DOI :
10.1109/SOI.1996.552545
Filename :
552545
Link To Document :
بازگشت