Title :
RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices
Author :
Stegmayer, G. ; Pirola, M. ; Camarchia, V. ; Orengo, G. ; Colantonio, P. ; Serino, A.
Author_Institution :
Electron. Dpt, Politecnico di Torino
Abstract :
This paper presents a new RF dynamic behavioral model based on a neural network (NN) approach suitable for FET devices in a wide range of working classes, and capable to identify the device response, through the training procedure, for a wide range of input power levels. The presented model has been effectively applied to GaN-based devices at 1 GHz, working in class A and B
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; FET devices; GaN-HEMT devices; RF dynamic behavioral model; neural network; Circuit simulation; Feedforward systems; Input variables; Intrusion detection; Neural networks; Neurons; Power system modeling; Radio frequency; Time domain analysis; Voltage; Dynamic behavioral model; GaN device; Neural Network;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9723-1
Electronic_ISBN :
0-7803-9723-1
DOI :
10.1109/INMMIC.2006.283495
