Characterization of MOS differential pair current offsets due to parameter variations

Author

Kulas, M. ; Nathan, A. ; O, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

1

fYear

1998

fDate

24-28 May 1998

Firstpage

441

Abstract

The MOSFET differential pair is an important building block for a wide variety of analog integrated circuit applications. Designing with differential pairs necessitates knowledge of offset currents resulting from differences between the individual FETs that compose the pair. In this paper, we have developed an offset model for a MOSFET differential pair. By fitting the model to measured offsets at selected biases, estimates of MOS parameter variations can be extracted. An equivalent circuit for implementation of the offset in SPICE is also presented

Keywords

MOS analogue integrated circuits; SPICE; equivalent circuits; integrated circuit modelling; MOS parameter variations; MOSFET differential pair; SPICE; analog integrated circuit applications; current offsets; equivalent circuit; offset currents; offset model; Doping; Electron mobility; Equations; Integrated circuit measurements; MOSFET circuits; Parameter estimation; SPICE; Semiconductor process modeling; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1998. IEEE Canadian Conference on

Conference_Location

Waterloo, Ont.

ISSN

0840-7789

Print_ISBN

0-7803-4314-X

Type

conf

DOI

10.1109/CCECE.1998.682779

Filename

682779