Title :
On the dependence of plasma-induced charging damage on antenna area
Author :
Hwang, G.S. ; Giapis, K.P.
Author_Institution :
Div. of Chem. & Chem. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Numerical simulations of pattern-dependent charging during etching of antenna structures in high-density plasmas reveal a counter-intuitive nonlinear dependence on the antenna area ratio of the tunneling current that stresses a thin buried gate oxide to which the antenna is electrically connected. The sub-linear relationship is explained by the fact that the net current density collected by the antenna decreases as the antenna area increases
Keywords :
buried layers; current density; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; numerical analysis; plasma density; plasma materials processing; semiconductor process modelling; sputter etching; surface charging; tunnelling; SiO2-Si; antenna area; antenna structures; etching; high-density plasmas; net current density; nonlinear antenna area ratio dependence; numerical simulation; pattern-dependent charging; plasma-induced charging damage; thin buried gate oxide; tunneling current; Electric breakdown; Electrons; Etching; Numerical simulation; Plasma applications; Plasma chemistry; Plasma density; Plasma simulation; Stress; Tunneling;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798799
