Title :
Effect of low temperature deuterium annealing on plasma process induced damage
Author :
Lee, S.H. ; Kim, Y.K. ; Lee, Y.H. ; Kang, H.S. ; Ahn, C.G. ; Kang, B.K. ; Jinju Lee ; Cheng, Kangguo ; Chen, Zhi ; Hess, Karl ; Lyding, Joseph W.
Author_Institution :
ASIC Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D2) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D2 annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D2 annealing effects, it is suggested that the D2 annealing should be conducted without any H2 annealing
Keywords :
annealing; deuterium; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; interface states; interface structure; plasma materials processing; sputter etching; D2; D2 annealing; D2 annealing effects; SiO2-Si; charge pumping; current-voltage measurements; deuterium annealing; device characteristics; electrical strength; electrical stress; interface damage; interface states; low temperature deuterium annealing; metal process induced plasma damage; metal processes; oxide damage; plasma exposure; plasma process induced damage; poly-Si gate process-induced plasma damage; poly-Si gate processes; thin gate oxide devices; Annealing; Charge measurement; Charge pumps; Current measurement; Deuterium; Monitoring; Plasma devices; Plasma measurements; Plasma properties; Plasma temperature;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798845
