DocumentCode
3243157
Title
Gas microsensors based on semiconductor thin films of ZnO:Ga
Author
Gonzalez-Vidal, J.L. ; Reyes-Barranca, A. ; de la L.Olvera, M. ; Maldonado, Andres
Author_Institution
C.I.T.I.S. Universidad Autonoma del Estado de Hidalgo, Carretera Pachuca-Tulancingo Km 4.5, Pachuca, Hidalgo, 42076, Mexico
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
272
Lastpage
275
Abstract
Four carbon monoxide microsensor based on semiconducting oxide ZnO:Ga has been developed. The results and analysis of the characterization in an atmosphere containing carbon monoxide (CO), are presented in this work, dilution CO is 50ppm. ZnO:Ga thin films were deposited at 450°C by the spray pyrolysis technique from a 0.2 M starting solution with a [Ga]/[Zn]= 3 at %. Microsensors with four different dimensions were designed: 20x20μm2, 20x40μm2, 20x60μm2 and 100x100μm2. Ohmic contacts were manufactured by thermal evaporation of aluminum on the top of the films. Both of gas microsensors and AI terminals were patterned by lift off. A surface resistance variation of several orders of magnitude was found in doped-gallium ZnO thin films when these were introduced into a camera with 0ppm, 1ppm, 5ppm, 50ppm and 100pm of CO. Thin films gas microsensors were tested at several temperatures and different CO concentrations. The measurement temperatures employed were 200°C, 250°C and 300°C. The surface of ZnO thin films doped with Ga was also characterized by AFM, showing a regular and uniform morpholgy.
Keywords
Aluminum; Microsensors; Semiconductivity; Semiconductor device doping; Semiconductor thin films; Spraying; Sputtering; Surface resistance; Temperature sensors; Zinc oxide; Microsensors; semiconductor oxide; thin films; zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location
Acapulco, Mexico
Print_ISBN
0-7803-8531-4
Type
conf
DOI
10.1109/ICEEE.2004.1433891
Filename
1433891
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