Title :
The 600 V rating n-ch trench IGBT with the low leakage current and the high channel mobility using the (010) oriented trench sidewall
Author :
Kim, Han-Soo ; Lee, Tae-Sun ; Kim, Hyun-Chul ; Choi, Yong-Chul ; Im, Pil-Gyu ; Kim, Deok-Jung
Author_Institution :
Samsung Electrons. Co. Ltd., Kyunggi, South Korea
Abstract :
The trench IGBT with high cell packing density is fabricated and the trench sidewall is designed to be oriented to (010) plane, The channel leakage current of the trench IGBT having the (010) oriented trench sidewall plane is reduced owing to the high segregation coefficient and low oxide charge density. The forward voltage drop of the trench IGBT with the (010) oriented sidewall channel is 0.1 V lower than that of the device with (110) oriented sidewall plane because the channel mobility increases
Keywords :
carrier mobility; insulated gate bipolar transistors; leakage currents; power transistors; (010) oriented trench sidewall; 600 V; forward voltage drop; high channel mobility; high segregation coefficient; low leakage current; low oxide charge density; n-channel trench IGBT; Boron; Electric variables; Etching; Impurities; Insulated gate bipolar transistors; Lattices; Leakage current; Oxidation; Rough surfaces; Surface roughness;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601489
