On-wafer testing of a W-band HEMT image-rejection downconverter MMIC

Author

Lin, E.W. ; Lo, D.C.W. ; Wang, Huifang ; Huang, T.W. ; Beidenbender, M. ; Dow, G.S. ; Allen, Ben

Author_Institution

Space & Electron. Technol. Group, TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

1479

Abstract

This paper describes the first successful on-wafer conversion gain and noise figure measurements taken on a downconverter MMIC at W-band. On-wafer and in-fixture measured results are consistent for a 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT-based W-band image-rejection downconverter MMIC which has attained good RF yield. With an LO drive of 5 dBm at 94 GHz, the downconverter chip has achieved an USB conversion gain of 7.5-8.5 dB and noise figure of 6.5-7.5 dB for an IF signal in the range of 40 to 400 MHz.<>

Keywords

HEMT integrated circuits; III-VI semiconductors; MMIC frequency convertors; aluminium compounds; automatic testing; gallium arsenide; indium compounds; integrated circuit noise; integrated circuit testing; millimetre wave frequency convertors; 0.1 micron; 6.5 to 7.5 dB; 7.5 to 8.5 dB; 94 GHz; AlGaAs-InGaAs-GaAs; HEMT-based ICs; IF signal; LO drive; MMIC; RF yield; USB conversion gain; W-band; image-rejection downconverter; on-wafer conversion gain measurements; on-wafer noise figure measurements; Gain measurement; HEMTs; Image converters; MMICs; Noise figure; Noise measurement; Radio frequency; Semiconductor device measurement; Testing; Universal Serial Bus;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406253

Filename

406253