Smart power with 1200 V DMOS

Author

Vogt, F. ; Vogt, H. ; Radecker, M. ; Fiedler, H.

Author_Institution

Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisberg, Germany

fYear

1997

fDate

26-29 May 1997

Firstpage

317

Lastpage

320

Abstract

This paper describes a smart-power-process which integrates a vertical 1200 V DMOS power transistor and low voltage CMOS circuits. For isolation purpose between the CMOS part and the high voltage power device, the local SIMOX process is used with a p-n junction in series. For the first time a scalable vertical 1200 V high power switching device has been combined with VLSI compatible CMOS to realize a resonant power supply circuit for compact fluorescent lamps. The functionality of the introduced process has been demonstrated by a monolithic integrated five terminal device for compact fluorescent lamps

Keywords

MOS integrated circuits; SIMOX; field effect transistor switches; integrated circuit technology; isolation technology; power MOSFET; power field effect transistors; power integrated circuits; power semiconductor switches; power supplies to apparatus; power supply circuits; 1200 V; DMOS power transistor; Si; VLSI compatible CMOS; compact fluorescent lamps; high power switching device; high voltage power device; isolation; local SIMOX process; low voltage CMOS circuits; monolithic integrated five terminal device; resonant power supply circuit; smart-power-process; CMOS process; Fluorescent lamps; Low voltage; P-n junctions; Power supplies; Power transistors; RLC circuits; Resonance; Switching circuits; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601504

Filename

601504