Title :
A novel sensing scheme for an MRAM with a 5% MR ratio
Author :
Yamada, K. ; Sakai, N. ; Ishizuka, Y. ; Mameno, K.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
A novel sensing scheme for a magneto-resistive random access memory (MRAM) with a twin cell structure is proposed. It operates by sensing the difference in voltage between a couple of magnetic tunnel junctions (MTJ) in a transitional state. This method can achieve an MRAM with simple circuits, even if the magneto-resistance (MR) ratio is lower than 10%. Moreover, it features good endurance against the dispersion of device characteristics.
Keywords :
magnetic film stores; magnetoresistive devices; random-access storage; MR ratio; MRAM; device characteristic dispersion; endurance; magnetic tunnel junctions; magneto-resistive random access memory; sensing scheme; transitional state; twin cell structure; voltage difference sensing; Circuit stability; Coupling circuits; Differential amplifiers; Magnetic circuits; Magnetic tunneling; Microelectronics; Nonvolatile memory; Random access memory; Variable structure systems; Voltage control;
Conference_Titel :
VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-014-3
DOI :
10.1109/VLSIC.2001.934214
