Title :
A double active gm-boosted-based inductorless differential wideband low-noise amplifier
Author :
Rong Zhang ; Cen Chen ; Zhi Li ; Zhongqian Fu ; Shengxi Diao ; Fujiang Lin
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
fDate :
March 30 2015-April 1 2015
Abstract :
A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.
Keywords :
CMOS integrated circuits; UHF amplifiers; low noise amplifiers; low-power electronics; wideband amplifiers; TSMC RF CMOS process; capacitive cross-coupled technique; common-gate stages; double active amplifier; frequency 1.2 GHz; gm-boosted amplifier; inductorless differential wideband amplifier; low-noise amplifier; noise-cancelling architecture; power 3.6 mW; power consumption; size 0.18 mum; voltage 1 V; CMOS integrated circuits; Gain; Impedance matching; MOSFET; Noise; Noise measurement; Wideband; CG LNA; capacitive cross-coupled (CCC) technique; double active gm-boosted; inductorless; noise-cancelling;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164540
