Title :
3-dimensional process simulation of rapid thermal annealing using a five species point defects diffusion model
Author :
Herbaux, Jérôme ; Senez, Vincent ; Hoffmann, Thomas ; Bossut, Régis ; Brocard, Dorothée
Author_Institution :
IEMN-ISEN, Villenneuve d´´Ascq, France
Abstract :
This paper reports the implementation of a five species point defects diffusion model in three dimensions and the various numerical issues associated with it. The results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented
Keywords :
MOSFET; diffusion; rapid thermal annealing; semiconductor device manufacture; semiconductor process modelling; 3D process simulation; MOS transistor manufacture; RTA; five species point defects diffusion model; numerical issues; rapid thermal annealing step; Equations; Gears; Ion implantation; Oxidation; Predictive models; Rapid thermal annealing; Rapid thermal processing; Semiconductor process modeling; Simulated annealing; Virtual manufacturing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799259
