Title :
Advanced process/device modeling and its impact on the CMOS design solution
Author :
Kumashiro, Shigetaka
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
Accurate global modeling is a key issue for the successful application of TCAD to the ULSI device design solution. To demonstrate how far we can go with the state-of-the-art global modeling, we tried to design 0.13 [μm] CMOS device by using our globally calibrated advanced process/device models. This paper reports the design methodology and the results compared with the fabricated device characteristics
Keywords :
CMOS integrated circuits; ULSI; integrated circuit design; integrated circuit modelling; semiconductor process modelling; technology CAD (electronics); 0.13 micron; CMOS ULSI design; TCAD; device model; global model; process model; CMOS process; Design methodology; Ion implantation; National electric code; Predictive models; Quantum mechanics; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799265
