Title :
Statistical Monte Carlo simulation for dielectric breakdown of oxide thin films: effect of nonuniformity of electron trap generation
Author :
Uno, Shigeyasu ; Kamakura, Yoshinari ; Okada, Kenji ; Taniguchi, Kenji
Author_Institution :
Dept. of Electron. & Inf. Sci., Osaka Univ., Japan
Abstract :
This paper introduces a new simulator to investigate the statistical characteristics of dielectric breakdown of silicon dioxide thin films in MOSFETs. Breakdown phenomena are well simulated using the percolation concept. Simulations are carried out taking account of various effects which are physically probable, and statistical properties of simulated breakdown phenomena are studied applying Weibull statistics. A new plotting method is also proposed which is very useful to determine what physical effects are accelerated by specific process conditions. Finally, we evaluate the effects of oxynitridation process on dielectric breakdown mechanisms
Keywords :
MOSFET; Monte Carlo methods; Weibull distribution; dielectric thin films; electron traps; nitridation; percolation; semiconductor device breakdown; MOSFETs; Weibull statistics; dielectric breakdown; electron trap generation nonuniformity; oxide thin films; oxynitridation process; percolation concept; plotting method; process conditions; statistical Monte Carlo simulation; Dielectric breakdown; Dielectric thin films; Electric breakdown; Electron traps; MOSFETs; Semiconductor thin films; Silicon compounds; Statistics; Stress; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799275
