• DocumentCode
    3250004
  • Title

    Comparison of finite element and finite box discretization for three-dimensional diffusion modeling using AMIGOS

  • Author

    Haindl, B. ; Kosik, R. ; Fleischmann, P. ; Selberherr, S.

  • Author_Institution
    Inst. fur Microelectron., Tech. Univ. Wien, Austria
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    The occurrence of unphysical negative concentrations in solutions to diffusion equations is a well known and severe problem. Especially in three dimensions finite element discretizations give qualitatively very poor results, while finite volume discretizations are much more stable. We investigate the cause of these instabilities and trace them back to constraints on the mesh. It turns out that in three dimensions conventional (i.e. Delaunay) meshes are only suitable for the finite box method, while Delaunay is an invalid constraint in the case of finite elements
  • Keywords
    diffusion; finite element analysis; finite volume methods; mesh generation; numerical stability; semiconductor process modelling; AMIGOS; Delaunay mesh; finite box discretization; finite element discretization; finite volume discretization; numerical instability; three-dimensional diffusion model; Ambient intelligence; Analytical models; Equations; Finite element methods; Iron; Microelectronics; Power system modeling; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    4-930813-98-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.1999.799278
  • Filename
    799278