DocumentCode
3250004
Title
Comparison of finite element and finite box discretization for three-dimensional diffusion modeling using AMIGOS
Author
Haindl, B. ; Kosik, R. ; Fleischmann, P. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Tech. Univ. Wien, Austria
fYear
1999
fDate
1999
Firstpage
131
Lastpage
134
Abstract
The occurrence of unphysical negative concentrations in solutions to diffusion equations is a well known and severe problem. Especially in three dimensions finite element discretizations give qualitatively very poor results, while finite volume discretizations are much more stable. We investigate the cause of these instabilities and trace them back to constraints on the mesh. It turns out that in three dimensions conventional (i.e. Delaunay) meshes are only suitable for the finite box method, while Delaunay is an invalid constraint in the case of finite elements
Keywords
diffusion; finite element analysis; finite volume methods; mesh generation; numerical stability; semiconductor process modelling; AMIGOS; Delaunay mesh; finite box discretization; finite element discretization; finite volume discretization; numerical instability; three-dimensional diffusion model; Ambient intelligence; Analytical models; Equations; Finite element methods; Iron; Microelectronics; Power system modeling; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location
Kyoto
Print_ISBN
4-930813-98-0
Type
conf
DOI
10.1109/SISPAD.1999.799278
Filename
799278
Link To Document