Title :
Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics
Author :
Lin, Chung-Kai ; Goldsman, Neil ; Mayergoyz, Isaak ; Aronowitz, Sheldon ; Belova, Nadya
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Improvements in the Spherical Harmonic (SH) method for solving Boltzmann Transport Equation (BTE) are presented. The simulation results provide the same physical detail as analytical band Monte Carlo (MC) calculations, and are obtained approximately a thousand times faster. A new physical model for surface scattering has also been developed. As a result, the SHBTE model achieves calibration for a complete process of I-V characteristics and substrate current consistently for the first time
Keywords :
Boltzmann equation; calibration; semiconductor device models; surface scattering; Boltzmann transport equation; I-V characteristics; SHBTE simulation; calibration; nanoscale electron dynamics; spherical harmonic device model; substrate current; surface scattering; Boltzmann equation; Calibration; Distribution functions; Educational institutions; Electrons; Finite wordlength effects; High definition video; Large scale integration; Nanoscale devices; Scattering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799287
