A quasi-mixed-mode MOSFET model for simulation and prediction of substrate resistance under ESD stress and layout variations

Author

Zhang, XinYi ; Yu, Zhiping ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1999

fDate

1999

Firstpage

211

Lastpage

214

Abstract

This paper presents a novel quasi-mixed-mode model for the computation of the varying substrate resistance during ESD stress. This model also predicts the change of substrate resistance with respect to layout variations. The model shows good agreement with experimental data, and has good convergence properties. This is the first time that a model has demonstrated accuracy in predicting the substrate resistance due to both ESD stress and layout changes

Keywords

MOSFET; circuit simulation; electric resistance; electrostatic discharge; impact ionisation; semiconductor device breakdown; semiconductor device models; 0.25 mum; 0.375 mum; ESD stress; MOSFET; NMOS devices; circuit simulation; convergence properties; device simulation; layout variations; quasi-mixed-mode model; substrate resistance; Breakdown voltage; Circuit simulation; Computational modeling; Convergence; Electrostatic discharge; MOSFET circuits; Predictive models; Protection; Stress; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799298

Filename

799298