Silicon Carbide Thin Film Deposited at Low Temperature by DC Magnetron Sputtering and Its Field Emission Property

Author

Wei, Yanjun ; Qi, Hanhong ; Wu, Weiyang

Author_Institution

Coll. of Electr. Eng., Yanshan Univ., Qinhuangdao, China

fYear

2009

fDate

14-16 Aug. 2009

Firstpage

1

Lastpage

3

Abstract

The SiC thin Alms were successfully fabricated on P-type <100> oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with DC power of 120 W. The deposition argon pressure was constantly at 2.0 Pa. The as-grown SiC films were characterized by using X-ray diffraction, atomic force microscope (AFM) and profilometer. The low turn-on field of about 4.5 V/mum obtained from the field-emission property measurement at an anode-sample separation of 200 mum shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.

Keywords

X-ray diffraction; atomic force microscopy; field emission; semiconductor thin films; silicon compounds; sintering; sputtering; substrates; wide band gap semiconductors; DC magnetron sputtering; SiC; X-ray diffraction; argon pressure; atomic force microscope; field emission property; low temperature; profilometer; semiconductor thin films; silicon substrates; sintering; vacuum microelectronic devices; Argon; Atomic force microscopy; Magnetic properties; Magnetic separation; Semiconductor films; Semiconductor thin films; Silicon carbide; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4412-0

Type

conf

DOI

10.1109/SOPO.2009.5230092

Filename

5230092