Density-gradient analysis of tunneling in MOS structures with ultra-thin oxides

Author

Ancona, M.G. ; Yu, Z. ; Dutton, R.W. ; Voorde, P. J Vande ; Cao, M. ; Vook, D.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1999

fDate

1999

Firstpage

235

Lastpage

238

Abstract

Quantum transport theory in the density-gradient approximation is applied to the analysis of tunneling phenomena in ultra-thin oxide (<25 A) MOS structures. Detailed comparisons are made with experimental I-V data for samples with both n⁺ and p⁺ polysilicon gates and all of the features of this data are found to be understandable within the density-gradient framework. Besides providing new understanding of the experiments, these results show the density-gradient approach to be useful for engineering-oriented device analysis in quantum regimes with current flow

Keywords

MIS structures; carrier density; quantum interference devices; quantum interference phenomena; semiconductor device models; semiconductor diodes; tunnelling; 12.5 to 25 angstrom; I-V data; MOS structures; Si-SiO₂; carrier density profiles; current flow; density-gradient analysis; engineering-oriented device analysis; n⁺ polysilicon gates; p⁺ polysilicon gates; polysilicon diodes; quantum transport theory; tunneling; ultra-thin oxides; Electric variables; Electrons; Equations; FETs; Microscopy; Nonvolatile memory; Quantum mechanics; Reliability engineering; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799304

Filename

799304