A high efficiency and high linearity two-stage power amplifier

Author

Hai-Feng Wu ; Qian-Fu Cheng

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

4

Abstract

A two-stage power amplifier (PA) using GaN HEMTs is presented with a high power added efficiency (PAE) and good linearity. This PA employs a structure of a class-C PA driving a class-AB PA to obtain a high PAE while maintaining the linearity. Source-pull and load-pull techniques were implemented to achieve optimum output impedance and inter-stage matching condition to compromise the PAE and the linearity of the overall circuit. When producing a two-tone carrier-to-intermodulation (C/I) ratio of 30 dB with the 1 MHz space, the two-stage PA exhibits a maximum PAE of 47% with an output power of 3 W at 3.7 GHz. The PA provides a maximum output power of 7 W with the gain of 15.8 dB.

Keywords

power amplifiers; PAE; carrier-to-intermodulation ratio; high linearity two stage power amplifier; interstage matching condition; load pull techniques; optimum output impedance; power added efficiency; source pull techniques; Gain; Gallium nitride; Linearity; Power amplifiers; Power generation; Power measurement; Radio frequency; Carrier-to-intermodulation ratio; linearity; power added efficiency; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164631

Filename

7164631