Title :
Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 /spl mu/m-scale embedded DRAM
Author :
Kamiyama, S. ; Drynan, J.M. ; Takaishi, Y. ; Koyama, K.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A metal-insulator-metal (MIM) capacitor process technology has been developed using highly reliable ultra-thin Ta/sub 2/O/sub 5/ capacitors with low pressure CVD-WN cylinder storage-nodes for 0.12 /spl mu/m-scale embedded DRAMs. The CVD-WN films using WF/sub 6/ and NF/sub 3/ gases have excellent characteristics with respect to surface morphology and step coverage in comparison with CVD-W films. As a result, the cell capacitance with CVD-WN cylinder storage-nodes is increased to 1.5 times as large as that of CVD-W cylinder storage-nodes. The CVD-WN cylinder capacitors can realize a 30 fF/cell capacitance with 0.6 /spl mu/m-height storage-nodes in an area of 0.25/spl times/0.5 /spl mu/m/sup 2/.
Keywords :
DRAM chips; MIM devices; capacitance; chemical vapour deposition; crystal morphology; electrolytic capacitors; integrated circuit metallisation; integrated circuit reliability; tungsten compounds; 0.12 micron; 0.25 micron; 0.5 micron; 0.6 micron; 30 fF; CVD-W cylinder storage-nodes; CVD-W films; CVD-WN cylinder capacitors; CVD-WN cylinder storage-nodes; CVD-WN films; MIM capacitor process technology; MIM capacitor technology; WF/sub 6/-NF/sub 3/; WF/sub 6/-NF/sub 3/ precursor gases; WN-Ta/sub 2/O/sub 5/; cell capacitance; embedded DRAM; highly reliable MIM capacitor technology; low pressure CVD-WN cylinder storage-node; low pressure CVD-WN cylinder storage-nodes; metal-insulator-metal capacitor process technology; step coverage; storage-node height; surface morphology; ultra-thin Ta/sub 2/O/sub 5/ capacitors; Capacitance; Electrodes; Gases; Leakage current; MIM capacitors; Material storage; Random access memory; Surface morphology; Surface resistance; Tin;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799329
