Title :
Equivalent circuit model for GaN-HEMTs in a switching simulation
Author :
Nakajima, Akira ; Takao, Kazuto ; Shimizu, Mitsuaki ; Okumura, Hajime ; Ohashi, Hiromichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
An equivalent circuit model for gallium nitride-based high electron mobility transistors (GaN-HEMTs) in an exact circuit simulation is proposed. The equivalent circuit contains inherent GaN device properties, such as current-collapse and shot-channel effects. Base on the equivalent model, an power loss simulator was developed. The simulation accuracy was more than 93%. A converter optimum design method is discussed using the power loss simulator.
Keywords :
III-V semiconductors; equivalent circuits; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; converter optimum design; current collapse; equivalent circuit model; power loss simulator; shot channel effects; switching simulation; Circuit simulation; Design methodology; Equivalent circuits; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Stress; Switching circuits; Voltage;
Conference_Titel :
Telecommunications Energy Conference, 2008. INTELEC 2008. IEEE 30th International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2055-1
Electronic_ISBN :
978-1-4244-2056-8
DOI :
10.1109/INTLEC.2008.4664095
